Impact of ion energy on single-event upset

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August undefined, 2024

Witryna1 lip 2007 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed … Witryna1 kwi 2007 · A new form of microscopy has been developed which produces micron- resolution maps of where single event upsets occur during ion irradiation of integrated circuits. utilizing a nuclear microprobe, this imaging technique can irradiate, in isolation, the lowest functional units of an integrated circuit (e.g. transistor drains, gates, …

The Impacts of Heavy Ion Energy on Single Event Upsets in SOI …

Witryna15 sie 2000 · The Single Event Upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total-dose degradation anticipated in space applications are experimentally and theoretically investigated. ... and immediately measures the effect of a high-energy ion strike on circuit performance. Information … Witryna1 lut 2011 · The Effect of Neutron Energy on Single Event Upsets and Multiple Bit Upsets.. United States: N. p., 2011. ... Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits. ... Single event upset mechanisms for low energy deposition events in silicon germanium HBTs. … immature insect stage

Single event upset mechanisms for low energy deposition events …

WitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, SEEs are typically caused by its heavy ion component. These heavy ions cause a … Witryna1 mar 1998 · The U.S. Department of Energy's Office of Scientific and Technical Information Witryna20 mar 2024 · Abstract: The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of 12 C ion linear energy transfer (LET) from 1.7 to … immature is it love this time

Impact of ion energy on single-event upset - IEEE Xplore

Impact of heavy ion energy and species on single-event …

WitrynaSingle Event Effect (SEE)- any measurable effect to a circuit due to an ion strike. This includes (but is not limited to) SEUs, SHEs, SELs, SEBs, SEGRs, and Single Event Dielectric Rupture (SEDR). Single Event Upset (SEU) - a change of state or transient induced by an energetic particle such as a cosmic ray or proton in a device. WitrynaAbstract: Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two diﬀerent regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their eﬀects on the radial … immature i\\u0027m not a fool youtube vevo channelWitryna1 maj 2024 · Traditionally, the linear energy transfer (LET) is considered as the only important factor influencing the sensitivity of the single-event effect (SEE) in semiconductor devices [1]. However, studies in recent years indicated that except for LET, the incident heavy ions energy and species will also impact SEE's measured … immature is it me

"Witryna20 mar 2024 · The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. " - Impact of ion energy on single-event upset

Impact of ion energy on single-event upset

The Impacts of Heavy Ion Energy on Single Event Upsets in SOI …

WitrynaImpact ionization is an efficient method to generate electron–hole pairs [1,3]. In N-channel MOSFET, the electrons are collected at the drain and the holes are retained in the body by a negative back-gate voltage. Writing “1” is fast but requires a high drain voltage () and consumes power. The parasitic bipolar transistor (PBT) is ... WitrynaThis thesis aims at determining the impact of thermal and intermediate energy neutrons (0.2-20 MeV) with respect to highly energetic particles on the Single Event Upset (SEU) and Latch-up (SEL ...

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WitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, … WitrynaThe two channels can be seamlessly interleaved for conversion rates up to 3.2 GSPS. The device was put through heavy ion testing and was monitored for Single Event Latch-up, Single Event Functional Interrupt and Single Event Upset (SEU). Testing was done at two different ion energies and the impact of ion energy on SEU response is …

Witryna1 cze 2013 · The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. Witryna21 lip 2024 · The particles with high linear energy transfer (LET) of 57.9 MeV cm 2 / mg is used to measure the single event latch-up (SEL) tolerance, which results in a sufficiently low cross-section of σ SEL < 4.2 × 10 − 11 cm 2 /(Ion×ASIC). The single event upset (SEU) tolerance is estimated with various kinds of species with wide …

WitrynaAbstract: The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of 12 C ion linear energy transfer (LET) from 1.7 to 3.0 … Witryna11 gru 2007 · The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and …

Witryna1 gru 1998 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit.

Witryna1 maj 2024 · The single event upset effect refers to the effect th at high-energy particles impact the storage circuit . ... When the heavy ion upset threshold is reached, the n0 node will upset from "1" to "0 list of shops in exeterWitrynaprovide a variety of ions over arange of energies for testing. Each device under test (DUT) was irradiated with heavy ions having linear energy transfer (LET) ranging from 0.07 to 80 MeV•cm 2 /mg. Fluxes ranged from 1x10 2 to 1x10 5 particles/cm 2 /s, depending on device sensitivity. Representative ions used are listed in Tables I, II … list of shops in liverpoolWitryna8 lut 2024 · The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. The results show that the transient drain current of MOSFET devices will increase rapidly when heavy ions are incident, and then the logic state of the devices will change. list of shops in frenchWitrynaImpact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits. IEEE Trans Nucl Sci., 54: 2303 – 2311. doi: 10.1109/TNS.2007.909844 , [Google Scholar] Petersen, E. 2011. Single event effects in aerospace, 337 – 343. Hoboken, NJ: Wiley. ISBN 9781118084328 [Google Scholar] list of shops in edinburghWitryna1 maj 2024 · Impact of ion energy on single-event upset. ... The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM. IEEE Trans. Nucl. Sci., 52 (2005), pp. 2125-2131, 10.1109/TNS.2005.860677. View Record in Scopus Google Scholar list of shops in newcastleWitryna12 gru 2007 · Abstract: The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and … immature japanese beetles picturesWitrynaThe JEDEC recommended definition is the first effect when the particle fluence = 10 7 ions/cm 2. Linear Energy Transfer (LET) ... A full SEU analysis considers the system effects of an upset. For example, a single bit flip, while not damaging to the circuitry involved, may damage the subsystem or system (i.e., initiating a pyrotechnic event ... list of shops in trafford centre manchester